|本期目录/Table of Contents|

[1]刘毅,韦素芬,单婵,等.溅射温度调制氧化镓生长结构及光透射[J].集美大学学报(自然科学版),2023,28(3):279-288.
　LIU Yi,WEI Sufen,SHAN Chan,et al.Modulation of Ga2O3 Growth Structure and Optical Transmittance by Sputtering Temperature[J].Journal of Jimei University,2023,28(3):279-288.
点击复制

溅射温度调制氧化镓生长结构及光透射(PDF)
分享到：

《集美大学学报（自然科学版）》[ISSN:1007-7405/CN:35-1186/N]

卷:
第28卷
期数:
2023年第3期
页码:
279-288
栏目:
数理科学与信息工程
出版日期:
2023-05-28

文章信息/Info

Title:
Modulation of Ga2O3 Growth Structure and Optical Transmittance by Sputtering Temperature
作者:
刘毅1; 韦素芬1; 单婵1; 吴梦春1; 陈红霞1; 刘璟1; 李明逵2
（1.集美大学海洋信息工程学院，福建 厦门 361021;2.三安光电股份有限公司，福建 厦门 361009）
Author(s):
LIU Yi1; WEI Sufen1; SHAN Chan1; WU Mengchun1; CHEN Hongxia1; LIU Jing1; LEE Mingkwei2
(1.School of Ocean Information Engineering,Jimei University,Xiamen 361021,China；2.San’an Optoelectronics CO,Ltd,Xiamen 361009,China)
关键词:
薄膜; 磁控溅射; 氧化镓; 柱状结构; 溅射温度; 光波导
Keywords:
thin film; magnetron sputtering; Ga2O3; column-like structure; sputtering temperature; optical waveguide
分类号:
-
DOI:
-
文献标志码:
A
摘要:
采用射频磁控溅射法,在（0001）蓝宝石衬底上制备了超宽带隙Ga2O3薄膜。在功率200 W、用时20 min、氧气和氩气气氛（氧气2.5%）总流量40 mL/min，以及不同的溅射温度(25 ℃（室温）、200 ℃、300 ℃、400 ℃、500 ℃、600 ℃）下，分别制备了Ga2O3薄膜。发现随着温度从室温到600 ℃，薄膜结构与溅射温度有强相关关系。扫描电子显微镜（SEM）测试结果显示,当溅射温度在200~300 ℃，Ga2O3薄膜截面逐渐产生柱状结构，且柱状结构随温度升高而变得更明显，即柱径和边缘间隙随温度升高而减小，当温度升高到400 ℃及以上，柱状结构开始转变为连续薄膜结构。X射线衍射（XRD）结果显示，升高温度对于柱状结构转变的影响与SEM测试结果一致。用薄膜生长机制模型(SK生长模型)来解释柱状结构的出现、生长、消失的机制，提出光波导的概念来阐释柱状结构在蓝光频段具更高透光性的原因，突显氧化镓作为蓝光LED钝化层的应用优势。
Abstract:
The ultra-wide bandgap Ga2O3 thin films were deposited on a (0001) sapphire substrate by radio frequency magnetron sputtering.The Ga2O3 thin films were prepared at a power of 200 W,a time of 20 min,and a total flow rate of 40 mL/min in an oxygen and argon atmosphere (2.5% oxygen ratio) at the different sputtering temperatures,(25 ℃(room temperature,RT),200 ℃,300 ℃,400 ℃,500 ℃ and 600 ℃).Analyzing the results of scanning electron microscopy (SEM) and X-ray diffraction (XRD) at different temperatures,it is observed that the film structure is strongly related to the sputtering temperature as the temperature goes from room temperature to 600 ℃ SEM results show that,when the sputtering temperature is between 200 ℃ and 300 ℃,the cross-section of Ga2O3 film gradually produces the column-like structures.And the growth of Ga2O3-column becomes distinguishing with the increase of temperature,that is to say,the column-size and boundary-gap decrease with the increase of temperature.When the temperature further rises to 400 ℃and above,the column-like structure begins to transform into a continuous film structure.The XRD results show that the effect of temperature increase on the transformation of the column-like structure is consistent with the SEM results.The thin-film formation mechanism model (SK growth model) was used to explain the appearance,the growth and the disappearance of the column-like structure.Then the relationship between the light transmittance and the column-like structure was analyzed.An optical wave guide (OWG) was used to explain well the reason why column-like structure has higher light transmittance in blue light band,highlighting the advantages of Ga2O3 as the passivation layer of blue light LED.

参考文献/References:

-

相似文献/References:

备注/Memo

备注/Memo:
-
更新日期/Last Update: 2023-09-12