|本期目录/Table of Contents|

[1]徐文彬,任高潮.氧空位对ZrSiO基MIM结构电容电学性能的影响[J].集美大学学报(自然科学版),2013,18(2):157-160.
　XU Wen-bin,REN Gao-chao.Influence of Oxygen Vacancies on the Electrical Properties of ZrSiO Thin Fims Based Metal-Insulator-Metal Structure Capacitor Applications[J].Journal of Jimei University,2013,18(2):157-160.
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氧空位对ZrSiO基MIM结构电容电学性能的影响(PDF)
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《集美大学学报（自然科学版）》[ISSN:1007-7405/CN:35-1186/N]

卷:
第18卷
期数:
2013年第2期
页码:
157-160
栏目:
数理科学与信息工程
出版日期:
2013-03-25

文章信息/Info

Title:
Influence of Oxygen Vacancies on the Electrical Properties of ZrSiO Thin Fims Based Metal-Insulator-Metal Structure Capacitor Applications
作者:
徐文彬1; 任高潮2
(1.集美大学信息工程学院,福建 厦门 361021 ;2.浙江大学信息与电子工程系,浙江 杭州 310027)
Author(s):
XU Wen-bin1; REN Gao-chao2
(1.School of Information Engineering,Jimei University,Xiamen 361021,China;2.Department of Information Science & Electronics Engineering,Zhejiang University,Hangzhou 310027,China)
关键词:
氧空位; MIM电容; ZrSiO
Keywords:
oxygen vacancies ; MIM capacitor; ZrSiO
分类号:
-
DOI:
-
文献标志码:
-
摘要:
       研究了磁控溅射法制备得到的MIM结构ZrSiO薄膜电容，ZrSiO薄膜的制备以沉积时和沉积后退火过程中的氧气流量为主要工艺参数，重点讨论了由不同工艺条件导致的不同氧空位密度对漏电特性和电容-电压非线性等电学性能的影响
Abstract:
MIM capacitors were studied using magnetron sputterd ZrSiO films.The fabrication of ZrSiO films was performed with different O2 flow rate during sputtering and postdepositon annealing.The role of oxygen vacancies resulted from the different oxygen flow rate conditions was focused.The influence of these oxygen vacancies to the leakage character and capacitance voltage nonlinearity of these capacitors was discussed

参考文献/References:

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相似文献/References:

[1]徐文彬,任高潮.基于氩等离子处理的阻变氧空位调控探讨[J].集美大学学报(自然科学版),2019,24(5):387.
　XU Wenbin,REN Gaochao.Oxygen Vacancy Regulation of Resistive Switching Properties Based on Argon Plasma Treatment[J].Journal of Jimei University,2019,24(2):387.

备注/Memo

备注/Memo:
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更新日期/Last Update: 2014-06-28