|本期目录/Table of Contents|

[1]徐文彬,任高潮.基于氩等离子处理的阻变氧空位调控探讨[J].集美大学学报(自然科学版),2019,24(5):387-392.
　XU Wenbin,REN Gaochao.Oxygen Vacancy Regulation of Resistive Switching Properties Based on Argon Plasma Treatment[J].Journal of Jimei University,2019,24(5):387-392.
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基于氩等离子处理的阻变氧空位调控探讨(PDF)
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《集美大学学报（自然科学版）》[ISSN:1007-7405/CN:35-1186/N]

卷:
第24卷
期数:
2019年第5期
页码:
387-392
栏目:
数理科学与信息工程
出版日期:
2019-09-28

文章信息/Info

Title:
Oxygen Vacancy Regulation of Resistive Switching Properties Based on Argon Plasma Treatment
作者:
徐文彬1; 任高潮2
(1.集美大学信息工程学院，福建 厦门 361021，2.浙江大学信电系，浙江 杭州 310027)
Author(s):
XU Wenbin1; REN Gaochao2
(1.College of Information Engineering，Jimei University，Xiamen 361021，China;2.Department of Information Science & Electronics Engineering，Zhejiang University，Hangzhou 310027,China)
关键词:
氧空位; 等离子; 阻变; ZnO; 无电形成
Keywords:
oxygen vacancies; plasma; resistive switching; ZnO; forming-free
分类号:
-
DOI:
-
文献标志码:
A
摘要:
以氩气等离子处理为优化工艺，通过其对ZnO阻变薄膜中氧空位缺陷的影响，来改进ZnO薄膜阻变特性。等离子处理范围减小和处理时间延长有助于阻变特性的稳定，以及阻变工作电压的降低。为了降低阻变工作电压及抑制随机性，最终确定的等离子处理条件是时间不超过45 min，处理范围介于0.8 mm×0.8 mm和0.9 mm×0.9 mm之间。主要的阻变工作电压均在3 V以下，适合低功耗器件应用。并结合处理条件和表面粗糙度等测试结果进行了讨论。
Abstract:
In this paper，argon plasma treatment is used to optimize the process to improve the resistance properties of zinc oxide film by affecting the oxygen vacancy defects in zinc oxide film.The decrease of plasma treatment range and the prolongation of treatment time contribute to the stability of resistance characteristics and the reduction of resistance operating voltage.In order to reduce the resistance voltage and restrain the randomness，the final plasma treatment conditions are determined to be less than 45 minutes，and the treatment range is between 0.8 mm×0.8 mm and 0.9 mm×0.9 mm.The main resistance operating voltage is below 3 V，which is suitable for low power devices.At the same time，the treatment conditions and surface roughness test results are discussed.

参考文献/References:

相似文献/References:

[1]徐文彬,任高潮.氧空位对ZrSiO基MIM结构电容电学性能的影响[J].集美大学学报(自然科学版),2013,18(2):157.
　XU Wen-bin,REN Gao-chao.Influence of Oxygen Vacancies on the Electrical Properties of ZrSiO Thin Fims Based Metal-Insulator-Metal Structure Capacitor Applications[J].Journal of Jimei University,2013,18(5):157.

备注/Memo

备注/Memo:
更新日期/Last Update: 2019-11-04