|本期目录/Table of Contents|

[1]李晖.HVPE反应器内输运现象的数值模拟研究[J].集美大学学报(自然科学版),2010,15(5):378-383.
　LI Hui.Numerical Study of Transport Phenomena in a HVPE Reactor[J].Journal of Jimei University,2010,15(5):378-383.
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HVPE反应器内输运现象的数值模拟研究(PDF)
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《集美大学学报（自然科学版）》[ISSN:1007-7405/CN:35-1186/N]

卷:
第15卷
期数:
2010年第5期
页码:
378-383
栏目:
船舶与机械工程
出版日期:
2010-09-25

文章信息/Info

Title:
Numerical Study of Transport Phenomena in a HVPE Reactor
作者:
李晖1; 2
(1.集美大学机械工程学院,福建 厦门 361021;2.江苏大学能源与动力工程学院, 江苏 镇江 212013)
Author(s):
LI Hui1; 2
(1.School of Mechanical Engineering,Jimei University,Xiamen 361021,China2.School of Energy and Power Engineering,Jiangsu University,Zhenjiang 212013,China)
关键词:
HVPE反应器; 同心圆喷头; 输运现象; 数值模拟
Keywords:
HVPE reactor; concentric-circular inlets; transport process; numerical simulation
分类号:
-
DOI:
-
文献标志码:
-
摘要:
］对用于制备GaN的具有同心圆喷头的HVPE（氢化物气相外延）反应器内的输运现象进行了三维数值模拟研究.在模拟计算中,分别改变总载气进口流量、同心圆喷口进口流量、重力、压强等条件,得到反应器内流场、温场、浓度场的相应变化.根据对模拟结果的分析,得出输运过程的优化条件为:尽量减小总载气进口流量，适当增大同心圆喷口的双进口流量,并降低反应室内的压强
Abstract:
Three-dimensional numerical study on transport phenomena in a HVPE reactor with concentric-circular inlets for preparing GaN film was conducted.By varying the operating parameters such as the inlet flow rates,gravity and gas pressure,the corresponding velocity, temperature and concentration fields inside the reactor were calculated.The optimum conditions of transport process for film growth were:decreasing the flow rate of carrier gas inlet,increasing the flow rate of the concentric-circular inlets for two reaction gases,and lowering the total pressure

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更新日期/Last Update: 2014-06-28